IXBT42N170 related parameters_IXBT42N170 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 42A
Power - Max	360 W
Switching Energy	-
Input Type	Standard
Gate Charge	188 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	1.32 µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268

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