IXBA16N170AHV related parameters_IXBA16N170AHV PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	16 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 10A
Power - Max	150 W
Switching Energy	2.5mJ (off)
Input Type	Standard
Gate Charge	65 nC
Td (on/off) @ 25°C	15ns/250ns
Test Condition	1360V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)	25 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263HV

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