IXGQ120N30TCD1 related parameters_IXGQ120N30TCD1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	300 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	-
Power - Max	-
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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