FGB30N6S2 related parameters_FGB30N6S2 PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	45 A
Current - Collector Pulsed (Icm)	108 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 12A
Power - Max	167 W
Switching Energy	55µJ (on), 100µJ (off)
Input Type	Standard
Gate Charge	23 nC
Td (on/off) @ 25°C	6ns/40ns
Test Condition	390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB

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