IRG4PH50S-EPBF related parameters_IRG4PH50S-EPBF PDF documentation_Infineon Technologies

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1.2 V
Current - Collector (Ic) (Max)	57 A
Current - Collector Pulsed (Icm)	114 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 33A
Power - Max	200 W
Switching Energy	1.8mJ (on), 19.6mJ (off)
Input Type	Standard
Gate Charge	167 nC
Td (on/off) @ 25°C	32ns/845ns
Test Condition	960V, 33A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD

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