IXYX100N120B3 related parameters_IXYX100N120B3 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	225 A
Current - Collector Pulsed (Icm)	530 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 100A
Power - Max	1150 W
Switching Energy	7.7mJ (on), 7.1mJ (off)
Input Type	Standard
Gate Charge	250 nC
Td (on/off) @ 25°C	30ns/153ns
Test Condition	600V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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