IXDP20N60B related parameters_IXDP20N60B PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	32 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	140 W
Switching Energy	900µJ (on), 400µJ (off)
Input Type	Standard
Gate Charge	70 nC
Td (on/off) @ 25°C	-
Test Condition	300V, 20A, 22Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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