APT50GN60BDQ2G related parameters_APT50GN60BDQ2G PDF documentation_Microchip Technology

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	107 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 50A
Power - Max	366 W
Switching Energy	1185µJ (on), 1565µJ (off)
Input Type	Standard
Gate Charge	325 nC
Td (on/off) @ 25°C	20ns/230ns
Test Condition	400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

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