SGW50N60HS related parameters_SGW50N60HS PDF documentation_Infineon Technologies

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	100 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	3.15V @ 15V, 50A
Power - Max	416 W
Switching Energy	1.96mJ
Input Type	Standard
Gate Charge	179 nC
Td (on/off) @ 25°C	47ns/310ns
Test Condition	400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3

Other

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