STGWA75H65DFB2 related parameters_STGWA75H65DFB2 PDF documentation_STMicroelectronics

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HB2
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	115 A
Current - Collector Pulsed (Icm)	225 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 75A
Power - Max	357 W
Switching Energy	1.428mJ (on), 1.05mJ (off)
Input Type	Standard
Gate Charge	207 nC
Td (on/off) @ 25°C	28ns/100ns
Test Condition	400V, 75A, 2.2Ohm, 15V
Reverse Recovery Time (trr)	88 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 Long Leads

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