IXXH30N60B3D1 related parameters_IXXH30N60B3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	115 A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 24A
Power - Max	270 W
Switching Energy	550µJ (on), 500µJ (off)
Input Type	Standard
Gate Charge	39 nC
Td (on/off) @ 25°C	23ns/97ns
Test Condition	400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)	25 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 (IXXH)

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