MMIX1G120N120A3V1 related parameters_MMIX1G120N120A3V1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	220 A
Current - Collector Pulsed (Icm)	700 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Power - Max	400 W
Switching Energy	10mJ (on), 33mJ (off)
Input Type	Standard
Gate Charge	420 nC
Td (on/off) @ 25°C	40ns/490ns
Test Condition	960V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)	700 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Supplier Device Package	24-SMPD

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