IXYP20N65C3 related parameters_IXYP20N65C3 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	105 A
Vce(on) (Max) @ Vge, Ic	-
Power - Max	200 W
Switching Energy	-
Input Type	-
Gate Charge	30 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	135 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	-
Package / Case	-
Supplier Device Package	-

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