IXYP20N65C3D1 related parameters_IXYP20N65C3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	105 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Power - Max	200 W
Switching Energy	430µJ (on), 350µJ (off)
Input Type	Standard
Gate Charge	30 nC
Td (on/off) @ 25°C	19ns/80ns
Test Condition	400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)	135 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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