RJP60F5DPK-01#T0 related parameters_RJP60F5DPK-01#T0 PDF documentation_Renesas Electronics America Inc

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 40A
Power - Max	260.4 W
Switching Energy	-
Input Type	Standard
Gate Charge	74 nC
Td (on/off) @ 25°C	53ns/90ns
Test Condition	400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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