IXGL200N60B3 related parameters_IXGL200N60B3 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	150 A
Current - Collector Pulsed (Icm)	600 A
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 100A
Power - Max	400 W
Switching Energy	1.6mJ (on), 2.9mJ (off)
Input Type	Standard
Gate Charge	750 nC
Td (on/off) @ 25°C	44ns/310ns
Test Condition	300V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUS264™
Supplier Device Package	ISOPLUS264™

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