NGTB30N120LWG related parameters_NGTB30N120LWG PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1.2 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	240 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 30A
Power - Max	560 W
Switching Energy	4.4mJ (on), 1mJ (off)
Input Type	Standard
Gate Charge	420 nC
Td (on/off) @ 25°C	136ns/360ns
Test Condition	600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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