FGH75T65SQD-F155 related parameters_FGH75T65SQD-F155 PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	150 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	-
Power - Max	375 W
Switching Energy	760µJ (on), 180µJ (off)
Input Type	Standard
Gate Charge	128 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	43 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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