HGT1S12N60A4DS related parameters_HGT1S12N60A4DS PDF documentation_Fairchild Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	54 A
Current - Collector Pulsed (Icm)	96 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Power - Max	167 W
Switching Energy	55µJ (on), 50µJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	17ns/96ns
Test Condition	390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)	30 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB

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