IXYH50N120C3D1 related parameters_IXYH50N120C3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	90 A
Current - Collector Pulsed (Icm)	210 A
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 50A
Power - Max	625 W
Switching Energy	3mJ (on), 1mJ (off)
Input Type	Standard
Gate Charge	142 nC
Td (on/off) @ 25°C	28ns/133ns
Test Condition	600V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)	195 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 (IXYH)

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