HGTG30N60A4D related parameters_HGTG30N60A4D PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	75 A
Current - Collector Pulsed (Icm)	240 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Power - Max	463 W
Switching Energy	280µJ (on), 240µJ (off)
Input Type	Standard
Gate Charge	225 nC
Td (on/off) @ 25°C	25ns/150ns
Test Condition	390V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)	55 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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