GA35XCP12-247 related parameters_GA35XCP12-247 PDF documentation_GeneSiC Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	35 A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 35A
Power - Max	-
Switching Energy	2.66mJ (on), 4.35mJ (off)
Input Type	Standard
Gate Charge	50 nC
Td (on/off) @ 25°C	-
Test Condition	800V, 35A, 22Ohm, 15V
Reverse Recovery Time (trr)	36 ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AB

Other

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