IXGX82N120B3 related parameters_IXGX82N120B3 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	230 A
Current - Collector Pulsed (Icm)	500 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 82A
Power - Max	1250 W
Switching Energy	5mJ (on), 3.3mJ (off)
Input Type	Standard
Gate Charge	350 nC
Td (on/off) @ 25°C	30ns/210ns
Test Condition	600V, 80A, 2Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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