HGTP12N60C3 related parameters_HGTP12N60C3 PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	24 A
Current - Collector Pulsed (Icm)	96 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 12A
Power - Max	104 W
Switching Energy	380µJ (on), 900µJ (off)
Input Type	Standard
Gate Charge	48 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

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