FGA30N60LSDTU related parameters_FGA30N60LSDTU PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	1.4V @ 15V, 30A
Power - Max	480 W
Switching Energy	1.1mJ (on), 21mJ (off)
Input Type	Standard
Gate Charge	225 nC
Td (on/off) @ 25°C	18ns/250ns
Test Condition	400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr)	35 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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