MMIX4G20N250 related parameters_MMIX4G20N250 PDF documentation_IXYS

Transistors - IGBTs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	2500 V
Current - Collector (Ic) (Max)	23 A
Power - Max	100 W
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 20A
Current - Collector Cutoff (Max)	10 µA
Input Capacitance (Cies) @ Vce	1190 pF @ 15 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	24-SMD Module, 9 Leads
Supplier Device Package	24-SMPD

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