NDUL03N150CG related parameters_NDUL03N150CG PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1500 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 50W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(L)
Package / Case	TO-3PL

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