VM0550-2F related parameters_VM0550-2F PDF documentation_IXYS

MOSFETs - Single

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Specifications

Description	Details
Series	HiPerFET™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	590A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.1mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	2000 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	50000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2200W
Operating Temperature	-
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module

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