NP100P04PDG-E1-AY related parameters_NP100P04PDG-E1-AY PDF documentation_Renesas Electronics America Inc

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	320 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15100 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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