NDP6020P related parameters_NDP6020P PDF documentation_ON Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	50mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1590 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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