UPA2716AGR-E1-AT related parameters_UPA2716AGR-E1-AT PDF documentation_Renesas Electronics America Inc

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	7mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PSOP
Package / Case	8-SOIC (0.173", 4.40mm Width)

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