CSD17555Q5A related parameters_CSD17555Q5A PDF documentation_Texas Instruments

MOSFETs - Single

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Specifications

Description	Details
Series	NexFET™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4.65 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSONP (5x6)
Package / Case	8-PowerTDFN

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