3N163 DIE related parameters_3N163 DIE PDF documentation_Linear Integrated Systems, Inc.

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	50mA
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	250Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id	5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-6.5V
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die

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