FQI4N90TU related parameters_FQI4N90TU PDF documentation_ON Semiconductor

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,398(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1.01732	$1.01732

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	QFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 140W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Other

Price advantage, FQI4N90TU is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRFZ34NSTRRPBF	International Rectifier	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 29A D2PAK	$0.48020	In Stock:19938
TSM60NB600CP ROG	Taiwan Semiconductor Corporation	MOSFETs - Single	Datasheet	MOSFET N-CHANNEL 600V 7A TO252	$3.10400	In Stock:19940
SUP40N10-30-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 38.5A TO220AB	No price	In Stock:19944
EPC2023	EPC	MOSFETs - Single	Datasheet	GANFET N-CH 30V 60A DIE	$7.21050	In Stock:8108
RJK6002DPD-WS#J2	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 2A MP3A	No price	In Stock:19948