TK12J60W,S1VE(S related parameters_TK12J60W,S1VE(S PDF documentation_Toshiba Semiconductor and Storage

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

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