IPT020N10N5ATMA1 related parameters_IPT020N10N5ATMA1 PDF documentation_Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	OptiMOS™5
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	273W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN

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