BSG0813NDIATMA1 related parameters_BSG0813NDIATMA1 PDF documentation_Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	19A, 33A
Rds On (Max) @ Id, Vgs	3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 12V
Power - Max	2.5W
Operating Temperature	-55°C ~ 155°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	PG-TISON-8

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