IXTL2X180N10T related parameters_IXTL2X180N10T PDF documentation_IXYS

MOSFETs - Arrays

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Specifications

Description	Details
Series	Trench™
Package	Tube
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	100A
Rds On (Max) @ Id, Vgs	7.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6900pF @ 25V
Power - Max	150W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUSi5-Pak™
Supplier Device Package	ISOPLUSi5-Pak™

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