PMCXB900UEZ related parameters_PMCXB900UEZ PDF documentation_Nexperia USA Inc.

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel Complementary
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	600mA, 500mA
Rds On (Max) @ Id, Vgs	620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	21.3pF @ 10V
Power - Max	265mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Supplier Device Package	DFN1010B-6

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