SQJ262EP-T1_GE3 related parameters_SQJ262EP-T1_GE3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs	35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V, 1260pF @ 25V
Power - Max	27W (Tc), 48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric

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