DF11MR12W1M1PB11BPSA1 related parameters_DF11MR12W1M1PB11BPSA1 PDF documentation_Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	EasyPACK™
Package	Tray
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	50A (Tj)
Rds On (Max) @ Id, Vgs	22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	3680pF @ 800V
Power - Max	20mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY1B-2

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