FMP76-010T related parameters_FMP76-010T PDF documentation_IXYS

MOSFETs - Arrays

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Specifications

Description	Details
Series	Trench™
Package	Tube
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	62A, 54A
Rds On (Max) @ Id, Vgs	11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5080pF @ 25V
Power - Max	89W, 132W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	i4-Pac™-5
Supplier Device Package	ISOPLUS i4-PAC™

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