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SI3909DV-T1-E3 Picture

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SI3909DV-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET 2P-CH 20V 6TSOP
  • Datasheet download
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In Stock:17,478(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
200mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id
500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.15W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Other
Price advantage, SI3909DV-T1-E3 is available in stock and can be delivered on the same day
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