19MT050XF related parameters_19MT050XF PDF documentation_Vishay General Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	4 N-Channel (H-Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	31A
Rds On (Max) @ Id, Vgs	220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7210pF @ 25V
Power - Max	1140W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	16-MTP Module
Supplier Device Package	16-MTP

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