TTC0002(Q) related parameters_TTC0002(Q) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	18 A
Voltage - Collector Emitter Breakdown (Max)	160 V
Vce Saturation (Max) @ Ib, Ic	2V @ 900mA, 9A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	180 W
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PL
Supplier Device Package	TO-3P(L)

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