2SC6042,T2HOSH1Q(J related parameters_2SC6042,T2HOSH1Q(J PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	375 V
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 800mA
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Power - Max	1 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	SC-71
Supplier Device Package	MSTM

Other

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