NE461M02-AZ related parameters_NE461M02-AZ PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Strip
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain	8.3dB
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50mA, 10V
Current - Collector (Ic) (Max)	250mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89

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