0105-50 related parameters_0105-50 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	100MHz ~ 500MHz
Noise Figure (dB Typ @ f)	-
Gain	8.5dB ~ 10dB
Power - Max	140W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Current - Collector (Ic) (Max)	7A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55JT
Supplier Device Package	55JT

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