NTE313 related parameters_NTE313 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	530MHz
Noise Figure (dB Typ @ f)	2.5dB @ 200MHz
Gain	23dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 2mA, 10V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	3-SMD

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