NTE77 related parameters_NTE77 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	1.8GHz
Noise Figure (dB Typ @ f)	2.7dB ~ 7dB @ 200MHz ~ 216MHz
Gain	7.2dB
Power - Max	3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 15V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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